Nanoscale selective Palladium deposition on the Hydrogen terminated Si(001) surface, in process.
Toshiyuki Mitsui, Eric Hill, Byron Freelon, Rob Curtis, and Eric Ganz
We demonstrate the selective physical vapor deposition (PVD) of palladium (Pd) to form noscale structures on Si(001) using scanning tunneling microscope lithography with an atomic hydrogen resist. We find that the selectivity of the PVD process is due to Paladium's longer diffusion length on the H resist layer than on bare Si(001), and that the selectivity is enhanced at elevated temperatures. Around 1000 K a Pd silicide is formed.
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