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Diffusion of Si dimers on Si(001)Surface Science 385 146-154 (1997).

M. Krueger, B. Borovsky, E. Ganz

The diffusion of Si dimers on the Si(001)-2 × 1 surface is studied with hot scanning-tunneling microscopy and a tracking technique in which each diffusive event is resolved. The activation energy for diffusion of a dimer along a substrate dimer row is found to be 1.09 ± 0.05 eV, with an attempt frequency of 1013.2+0.6 Hz. A lower bound of 1.40 eV is placed on the activation energy for dimer dissociation. The free energy of a dimer is observed to decrease by 32 ± 2 meV at a site adjacent to a type-A edge.

Surface Science




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Copyright 1996 by the Regents of the University of Minnesota