Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist, Journal of Applied Physics 85, 522, (1999).
Toshiyuki Mitsui, Eric Hill, and Eric Ganz
We report the fabrication of Al nanostructures using selective chemical vapor deposition (CVD) growth and an atomic hydrogen resist. A scanning tunneling microscope is used to pattern the hydrogen terminated surface by local removal of hydrogen atoms. The high selectivity of the CVD process limits Al growth to the uncovered regions. We demonstrate the fabrication of Al features as small as 2 nm.
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of Al features using DMAH and a hydrogen resist
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Copyright 1998 by the Regents of the University of Minnesota