The Diffusion of the Silicon Dimer on Si(001): New Possibilities at 450K Physics Review Letters 22, 4229 (1997).
B. Borovsky, M. Krueger, E. Ganz
We demonstrate the use of a scanning tunneling microscope (STM) to investigate a complex molecular diffusion pathway. Using hot STM movies at elevated temperatures, we follow the diffusion of silicon dimers adsorbed on the silicon(001) surface. From room temperature up to 450K, the dimers are very long lived and move only in one dimension, along the tops of the dimer rows of this surface. Above 450K, a dimer can convert to a configuration which is centered between two dimer rows. This conversion process provides a novel pathway for dimer diffusion across dimer rows.
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Copyright 1996 by the Regents of the University of Minnesota