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All images included here were taken on the
Si (001)-2 × 1 reconstructed surface. Unless otherwise noted,
they were imaged with a +2 Volt bias on the tip; so filled
electron states were sampled. Note: some of
the images made with a negative tip-sample bias display the troughs
as light and the rows as dark. The
configuration diagrams on this page are schematic in nature and
are based the following works:
G. Brocks and P. J. Kelly. Dynamics and Nucleation of Si Ad-dimers on the Si(100) Surface, Phys. Rev. Lett. 76, 2362-2365 (1996.)
T. Yamasaki and T. Uda. Initial Process of Si Homoepitaqxial Growth on Si(001), Phys. Rev. Lett. 76, 2949-2952 (1996).
A. van Dam, J. van Wingerden, et al., Interactions between absorbed Si dimers on Si(001), Phys. Rev. B. 54 1557-1560 (1996).
J. van Wingerden, A. van Dam, et al., Room temperature growth of submonolayers of silicon on Si(001) studied with STM, (Submitted: June 1996, Phys. Rev. B).
J. van Wingerden, A. van Dam, et al., Atomic details of step flow growth on Si(001), (Submitted: July 1996, Phys. Rev. B).
M. Uchikawa, et al. Defect-induced Si(100) dimer buckling structures studied by scanning tunneling microscopy, Surface. Sci. 357-358 (1996) 468-471.
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