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Initial stages of Al growth from dimethylaluminum hydride on silicon, Physical Review B. 59, 8123 (1999).

Toshiyuki Mitsui, Eric Hill, and Eric Ganz

We use Scanning Tunneling Microscopy to study the initial stages of ultra high vacuum chemical vapor deposition of Al on the Si(001) – (2 × 1) surface from dimethylaluminum hydride (DMAH). At room temperature, the DMAH molecules adsorb intact in seven distinct configurations, which we identify with the DMAH dimer. After annealing above 525 K the molecules decompose into H, CH₃ and Al. By contrast, the majority of impinging DMAH molecules crack when dosed on a surface as cool as 350 K. Dosing at the industrial process temperature of 575 K produces the cleanest aluminum growth.

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Initial stages of Al growth from DMAH on Si
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